Performance of current-in-plane pseudo-spin-valve devices on CMOS silicon-on-insulator underlayers

被引：0

作者：

机构：

[1] Katti, R.R.

[2] Zou, D.

[3] Reed, D.

[4] Schipper, D.

[5] Hynes, O.

[6] Shaw, G.

[7] Kaakani, H.

来源：

Katti, R.R. (romney.katti@honeywell.com) | 1600年 / American Institute of Physics Inc.卷 / 93期

关键词：

CMOS integrated circuits - Data storage equipment - Electric currents - Giant magnetoresistance - Switching;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Performance of current-in-plane (CIP) pseudo-spin-valve (PSV) devices on CMOS silicon-on-insulator underlayers was investigated. Reading and writing field for selected devices were shown to be approximately 25%-50% that of unselected devices. It provided a margin for reading and writing specific bits in a memory without overwriting bits and without disturbing other bits.

引用

共 47 条

[21] Silicon-on-insulator technology boosts performance in mass-produced CMOS ICs
Fletcher, P
ELECTRONIC DESIGN, 1998, 46 (21) : 26 - +
[22] Spin dependence scattering and spin-flip effect on the current-in-plane transport behavior in NiO-based-spin valve
Zhang, A. M.
Cai, H. L.
Wu, X. S.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2010, 247 (02): : 329 - 334
[23] Current-induced magnetization switching in pseudo-spin-valve multilayers with and without a Ru capping layer
Guo, J
Jalil, MBA
Jiang, Y
PHYSICAL REVIEW B, 2005, 72 (06)
[24] Two-terminal current-in-plane giant magnetoresistance devices driven by the spin-orbit torque
Dong, Yiqing
Xu, Teng
Jiang, Wanjun
APPLIED PHYSICS LETTERS, 2021, 119 (19)
[25] Performance improvement to silicon-on-insulator waveguide directional-coupler based devices
Sun, DeGui
Hasan, Imad
Abdul-Majid, Sawsan
Vandusen, Rob
Zheng, Qi
Hussien, Ali
Wang, Chunxia
Hu, Zhongming
Tarr, T. Garry
Hall, Trevor J.
OPTOELECTRONIC DEVICES AND INTEGRATION III, 2010, 7847
[26] Combined ballistic and diffusive model of spin-polarized current-induced magnetization switching in pseudo-spin-valve structure
Guo, J
Jalil, MBA
PHYSICAL REVIEW B, 2005, 71 (22)
[27] Pseudo-spin-valve trilayer using amorphous CoNbZr layer: Giant magnetoresistance, domain structures and potentials for spin-electronic devices
Wen, QY
Zhang, HW
Jiang, XD
Shi, XD
Tang, XL
Zhang, WL
CHINESE PHYSICS LETTERS, 2004, 21 (05) : 941 - 944
[28] HIGH-PERFORMANCE THIN-FILM SILICON-ON-INSULATOR CMOS TRANSISTORS IN POROUS ANODIZED SILICON
THOMAS, NJ
DAVIS, JR
KEEN, JM
CASTLEDINE, JG
BRUMHEAD, D
GOULDING, M
ALDERMAN, J
FARR, JPG
EARWAKER, LG
LECUYER, J
STIRLAND, IM
COLE, JM
IEEE ELECTRON DEVICE LETTERS, 1989, 10 (03) : 129 - 131
[29] The impact of the external magnetic field on the resistance-current curve of the deep submicron pseudo-spin-valve structure
Zhang, Lei
Ren, Min
Hu, Jiuning
Dong, Hao
Deng, Ning
Chen, Peiyi
2007 INTERNATIONAL WORKSHOP ON ELECTRON DEVICES AND SEMICONDUCTOR TECHNOLOGY, 2007, : 93 - +
[30] Magnetoresistance effect realized in current-in-plane Van der Waals spin valve structure by electrically switchable magnetization
Wu, Xiuqiang
Meng, Hao
Zhang, Haiyang
Xu, Ning
NEW JOURNAL OF PHYSICS, 2021, 23 (10):

← 1 2 3 4 5 →