CMOS integrated circuits - Data storage equipment - Electric currents - Giant magnetoresistance - Switching;
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摘要:
Performance of current-in-plane (CIP) pseudo-spin-valve (PSV) devices on CMOS silicon-on-insulator underlayers was investigated. Reading and writing field for selected devices were shown to be approximately 25%-50% that of unselected devices. It provided a margin for reading and writing specific bits in a memory without overwriting bits and without disturbing other bits.