P-type AlAs growth on a GaAs (311)B substrate using carbon auto-doping for low resistance GaAs/AlAs distributed Bragg reflectors

被引：0
|
作者：
Mizutani, Akimasa [1 ]
Hatori, Nobuaki [1 ]
Ohnoki, Noriyuki [1 ]
Nishiyama, Nobuhiko [1 ]
Ohtake, Nobuyuki [1 ]
Koyama, Fumio [1 ]
Iga, Kenichi [1 ]
机构：
[1] Tokyo Inst of Technology, Yokohama, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers | 1997年 / 36卷 / 11期
关键词：
Experimental; (EXP);
D O I：
暂无
中图分类号：
学科分类号：
摘要：
A high p-type hole-concentration AlAs layer has been successfully grown on a GaAs (311)B substrate by metallorganic chemical vapor deposition with using a Carbon auto-doping technique. The doping concentration was well controlled by changing only V/III ratios. The hole concentration was as high as 2×1019 cm-3 at a V/III ratio of 6. A very low resistance of p-type distributed Bragg reflector was obtained with a δ-doping technique to GaAs/AlAs interfaces.
引用
收藏
页码：6728 / 6729
相关论文
共 33 条
  • [1] P-type AlAs growth on a GaAs (311)B substrate using carbon auto-doping for low resistance GaAs/AlAs distributed Bragg reflectors
    Mizutani, A
    Hatori, N
    Ohnoki, N
    Nishiyama, N
    Ohtake, N
    Koyama, F
    Iga, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (11): : 6728 - 6729
  • [2] Doping-induced losses in AlAs/GaAs distributed Bragg reflectors
    Asplund, C
    Mogg, S
    Plaine, G
    Salomonsson, F
    Chitica, N
    Hammar, M
    JOURNAL OF APPLIED PHYSICS, 2001, 90 (02) : 794 - 800
  • [3] Application of intermixing to p-type GaAs/AlAs distributed Bragg reflectors for series resistance reduction in vertical cavity devices
    1600, American Inst of Physics, Woodbury, NY, USA (77):
  • [4] Alternating Be and C doping for strain compensated GaAs/AlAs distributed Bragg reflectors
    Mazuelas, A
    Hey, R
    Jenichen, B
    Grahn, HT
    APPLIED PHYSICS LETTERS, 1997, 70 (16) : 2088 - 2090
  • [5] APPLICATION OF INTERMIXING TO P-TYPE GAAS/ALAS DISTRIBUTED BRAGG REFLECTORS FOR SERIES RESISTANCE REDUCTION IN VERTICAL-CAVITY DEVICES
    KHAN, A
    WOODBRIDGE, K
    GHISONI, M
    PARRY, G
    BEYER, G
    ROBERTS, J
    PATE, M
    HILL, G
    JOURNAL OF APPLIED PHYSICS, 1995, 77 (10) : 4921 - 4926
  • [6] Strain compensation in highly carbon doped GaAs/AlAs distributed Bragg reflectors
    Mazuelas, A
    Hey, R
    Wassermeier, M
    Grahn, HT
    JOURNAL OF CRYSTAL GROWTH, 1997, 175 : 383 - 386
  • [7] Strain compensation in highly carbon doped GaAs/AlAs distributed Bragg reflectors
    Mazuelas, A.
    Hey, R.
    Wassermeier, M.
    Grahn, H.T.
    Journal of Crystal Growth, 1997, 175-176 (pt 1): : 383 - 386
  • [8] InGaAs/GaAs vertical-cavity surface emitting laser on GaAs (311)B substrate using carbon auto-doping
    Mizutani, A
    Hatori, N
    Nishiyama, N
    Koyama, F
    Iga, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (3B): : 1408 - 1412
  • [9] Investigation of diffusion in AlAs/GaAs distributed Bragg reflectors using HAADF STEM imaging
    Schowalter, M.
    Tewes, M.
    Frank, K.
    Imlau, R.
    Rosenauer, A.
    Lee, H. S.
    Rastelli, A.
    Schmidt, O. G.
    Tavast, M.
    Leinonen, T.
    Guina, M.
    17TH INTERNATIONAL CONFERENCE ON MICROSCOPY OF SEMICONDUCTING MATERIALS 2011, 2011, 326
  • [10] Growth and x-ray characterization of strain compensated GaAs/AlAs distributed Bragg reflectors
    Mazuelas, A
    Norenberg, H
    Hey, R
    Grahn, HT
    APPLIED PHYSICS LETTERS, 1996, 68 (06) : 806 - 808
1234