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- [2] P-type AlAs growth on a GaAs (311)B substrate using carbon auto-doping for low resistance GaAs/AlAs distributed Bragg reflectors Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1997, 36 (11): : 6728 - 6729
- [3] P-type AlAs growth on a GaAs (311)B substrate using carbon auto-doping for low resistance GaAs/AlAs distributed Bragg reflectors JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (11): : 6728 - 6729
- [6] CARRIER TRANSPORT IN P-TYPE GAINASP/INP DISTRIBUTED BRAGG REFLECTORS JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (08): : 4614 - 4616
- [7] Carrier transport in p-type GaInAsP/InP distributed Bragg reflectors Miyamoto, Tomoyuki, 1600, JJAP, Minato-ku, Japan (33):
- [10] Half-wave cavity vertical cavity surface emitting lasers with native oxide/GaAs lower distributed Bragg reflectors VERTICAL-CAVITY SURFACE-EMITTING LASERS, 1997, 303 : 154 - 160