P-type AlAs growth on a GaAs (311)B substrate using carbon auto-doping for low resistance GaAs/AlAs distributed Bragg reflectors

被引：0
|
作者：
Mizutani, Akimasa [1 ]
Hatori, Nobuaki [1 ]
Ohnoki, Noriyuki [1 ]
Nishiyama, Nobuhiko [1 ]
Ohtake, Nobuyuki [1 ]
Koyama, Fumio [1 ]
Iga, Kenichi [1 ]
机构：
[1] Tokyo Inst of Technology, Yokohama, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers | 1997年 / 36卷 / 11期
关键词：
Experimental; (EXP);
D O I：
暂无
中图分类号：
学科分类号：
摘要：
A high p-type hole-concentration AlAs layer has been successfully grown on a GaAs (311)B substrate by metallorganic chemical vapor deposition with using a Carbon auto-doping technique. The doping concentration was well controlled by changing only V/III ratios. The hole concentration was as high as 2×1019 cm-3 at a V/III ratio of 6. A very low resistance of p-type distributed Bragg reflector was obtained with a δ-doping technique to GaAs/AlAs interfaces.
引用
收藏
页码：6728 / 6729
相关论文
共 33 条
  • [21] MOLECULAR-BEAM EPITAXY GROWTH AND PROPERTIES OF GAAS/(ALGA)AS P-TYPE HETEROSTRUCTURES ON (100), (011), (111)B, (211)B, (311)B, AND (311)A ORIENTED GAAS
    HENINI, M
    CRUMP, PA
    RODGERS, PJ
    GALLAGHER, BL
    VICKERS, AJ
    HILL, G
    JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) : 446 - 450
  • [22] GROWTH OF P-TYPE AND N-TYPE GAAS/(ALGA)AS DOUBLE BARRIER RESONANT TUNNELING DEVICES ON (311)A AND (111)B SUBSTRATE ORIENTATIONS
    HARRISON, PA
    HAYDEN, RK
    HENINI, M
    VALADARES, EC
    HUGHES, OH
    EAVES, L
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (04): : 2040 - 2045
  • [23] P-TYPE DOPING LIMIT OF CARBON IN ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH OF GAAS USING CARBON-TETRACHLORIDE
    ENQUIST, PM
    APPLIED PHYSICS LETTERS, 1990, 57 (22) : 2348 - 2350
  • [24] THE GROWTH BY MOCVD OF LOW-DOPED P-TYPE GAAS USING A DIMETHYLZINC ADDUCT
    WRIGHT, PJ
    COCKAYNE, B
    JONES, AC
    ORRELL, ED
    JOURNAL OF CRYSTAL GROWTH, 1988, 91 (1-2) : 63 - 66
  • [25] Implementation of a closed-loop growth scheme for AlAs-GaAs distributed Bragg reflector (DBR) structures using in situ pyrometric interferometry monitoring
    Liu, X
    Ranalli, E
    Sato, DL
    Lee, HP
    IEEE PHOTONICS TECHNOLOGY LETTERS, 1996, 8 (03) : 340 - 342
  • [26] LOW-RESISTANCE NONALLOYED OHMIC CONTACTS ON P-TYPE GAAS USING GASB/GAAS STRAINED-LAYER SUPERLATTICES
    CHYI, JI
    CHEN, J
    KUMAR, NS
    KIELY, C
    PENG, CK
    ROCKETT, A
    MORKOC, H
    APPLIED PHYSICS LETTERS, 1989, 55 (06) : 570 - 571
  • [27] Suppression of Ge-based defects and auto-doping of p-type epitaxial GaAs by employing Al0.3Ga0.7As bi-layer buffer
    Dalapati, G. K.
    Guhathakurata, S.
    Das, A.
    Mahata, C.
    Chakraborty, S.
    Bhunia, S.
    Seng, H. L.
    Chattopadhyay, S.
    Bera, L. K.
    Tripathy, S.
    JOURNAL OF ALLOYS AND COMPOUNDS, 2018, 765 : 994 - 1002
  • [28] LOW RESISTANCE WAVELENGTH-REPRODUCIBLE P-TYPE (AL,GA)AS DISTRIBUTED BRAGG REFLECTORS GROWN BY MOLECULAR-BEAM EPITAXY
    CHALMERS, SA
    LEAR, KL
    KILLEEN, KP
    APPLIED PHYSICS LETTERS, 1993, 62 (14) : 1585 - 1587
  • [29] A study on maskless selective growth of Mg-doping p-type GaAs using low-energy focused ion beam
    Kim, E. M.
    Gotoh, T.
    Fukai, M.
    Suzuki, T.
    Pak, K.
    JOURNAL OF CRYSTAL GROWTH, 2007, 301 (221-224) : 221 - 224
  • [30] Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO2/Al2O3 gate stack: Study of Ge auto-doping and p-type Zn doping
    Dalapati G.K.
    Wong T.K.S.
    Li Y.
    Chia C.K.
    Das A.
    Mahata C.
    Gao H.
    Chattopadhyay S.
    Kumar M.K.
    Seng H.L.
    Maiti C.K.
    Chi D.Z.
    Nanoscale Research Letters, 2012, 7 (1):
1234