P-type AlAs growth on a GaAs (311)B substrate using carbon auto-doping for low resistance GaAs/AlAs distributed Bragg reflectors

被引：0

作者：

Mizutani, Akimasa ^{[1
]}

Hatori, Nobuaki ^{[1
]}

Ohnoki, Noriyuki ^{[1
]}

Nishiyama, Nobuhiko ^{[1
]}

Ohtake, Nobuyuki ^{[1
]}

Koyama, Fumio ^{[1
]}

Iga, Kenichi ^{[1
]}

机构：

[1] Tokyo Inst of Technology, Yokohama, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers | 1997年 / 36卷 / 11期

关键词：

Experimental; (EXP);

D O I：

暂无

中图分类号：

学科分类号：

摘要：

A high p-type hole-concentration AlAs layer has been successfully grown on a GaAs (311)B substrate by metallorganic chemical vapor deposition with using a Carbon auto-doping technique. The doping concentration was well controlled by changing only V/III ratios. The hole concentration was as high as 2×1019 cm-3 at a V/III ratio of 6. A very low resistance of p-type distributed Bragg reflector was obtained with a δ-doping technique to GaAs/AlAs interfaces.

引用

页码：6728 / 6729

共 33 条

[31] LOW-RESISTANCE OHMIC CONTACTS TO P-TYPE GaAs USING Zn/Pd/Au METALLIZATION.
Brooks, R.C.
Chen, C.L.
Chu, A.
Mahoney, L.J.
Mavroides, J.G.
Manfra, M.J.
Finn, M.C.
Electron device letters, 1985, EDL-6 (10): : 525 - 527
[32] VERY LOW THRESHOLD 780 NM ALGAAS SDH LASERS ON P-TYPE GAAS SUBSTRATE FABRICATED USING SINGLE-STEP MOCVD
NARUI, H
DOI, M
MATSUDA, O
MORI, Y
ELECTRONICS LETTERS, 1992, 28 (13) : 1282 - 1283
[33] GROWTH OF HIGH-QUALITY P-TYPE GAAS EPITAXIAL LAYERS USING CARBON TETRABROMIDE BY GAS-SOURCE MOLECULAR-BEAM EPITAXY AND MOLECULAR-BEAM EPITAXY
HOUNG, YM
LESTER, SD
MARS, DE
MILLER, JN
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (03): : 915 - 918

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