MILLIMETER-WAVE GaAs FET's PREPARED BY MBE.

被引：0
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作者：
Kim, B. [1 ]
Tserng, H.Q. [1 ]
Shih, H.D. [1 ]
机构：
[1] Texas Instruments Inc, Central, Research Lab, Dallas, TX, USA, Texas Instruments Inc, Central Research Lab, Dallas, TX, USA
来源：
Electron device letters | 1985年 / EDL-6卷 / 01期
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