MILLIMETER-WAVE GaAs FET's PREPARED BY MBE.

被引:0
|
作者
Kim, B. [1 ]
Tserng, H.Q. [1 ]
Shih, H.D. [1 ]
机构
[1] Texas Instruments Inc, Central, Research Lab, Dallas, TX, USA, Texas Instruments Inc, Central Research Lab, Dallas, TX, USA
来源
Electron device letters | 1985年 / EDL-6卷 / 01期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
9
引用
收藏
页码:1 / 2
相关论文
共 50 条
  • [41] EFFECTS OF TRANSIENT CARRIER TRANSPORT IN MILLIMETER-WAVE GAAS DIODES
    GRONDIN, RO
    BLAKEY, PA
    EAST, JR
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (01) : 21 - 28
  • [42] GAAS ON SI AS A SUBSTRATE FOR MICROWAVE AND MILLIMETER-WAVE MONOLITHIC INTEGRATION
    AKSUN, MI
    MORKOC, H
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1988, 36 (01) : 160 - 162
  • [43] MILLIMETER-WAVE ION-IMPLANTED GAAS-MESFETS
    FENG, M
    LEPKOWSKI, TR
    WANG, GW
    LAU, CL
    ITO, C
    INSTITUTE OF PHYSICS CONFERENCE SERIES <D>, 1989, (96): : 513 - 517
  • [45] Analysis and design of millimeter-wave FET-based image reject mixers
    Gunnarsson, Sten E.
    Kuylenstierna, Dan
    Zirath, Herbert
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2007, 55 (10) : 2065 - 2074
  • [46] Millimeter-wave FET modeling using on-wafer measurements and EM simulation
    Cidronali, A
    Collodi, G
    Santarelli, A
    Vannini, G
    Manes, G
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2002, 50 (02) : 425 - 432
  • [47] Physics-based FET noise model applicable to millimeter-wave frequencies
    Lee, D
    Kwon, Y
    Min, HS
    1999 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-4, 1999, : 109 - 112
  • [48] Second-Harmonic Injection Linearization of Millimeter-Wave FET Resistive Mixers
    Clements, Matthew S.
    Pham, Anh-Vu
    Sacks, J. Scott
    Avery, Steve E.
    IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2019, 29 (10) : 669 - 672
  • [49] Millimeter-wave high-power MMIC switch with multiple FET resonators
    Hangai, Masatake
    Nishino, Tamotsu
    Hieda, Morishige
    Endo, Kunihiro
    Miyazaki, Moriyasu
    IEICE TRANSACTIONS ON ELECTRONICS, 2007, E90C (09): : 1695 - 1701
  • [50] InGaP/InGaAs/GaAs pseudomorphic HEMT grown by solid source MBE.
    Aziz, AA
    Missous, M
    1996 HIGH PERFORMANCE ELECTRON DEVICES FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS WORKSHOP - EDMO, 1996, : 145 - 152