Low-cost GaAs pHEMT MMIC's for millimeter-wave sensor applications

被引：31
|
作者：
Siweris, HJ
Werthof, A
Tischer, H
Schaper, U
Schäfer, A
Verweyen, L
Grave, T
Böck, G
Schlechtweg, M
Kellner, W
机构：
[1] Siemens AG, Corp Technol, D-81730 Munich, Germany
[2] Tech Univ Berlin, D-10587 Berlin, Germany
[3] Fraunhofer Inst Appl Solid State Phys, D-79108 Freiburg, Germany
[4] Siemens AG, Semicond Grp, D-81617 Munich, Germany
来源：
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1998年 / 46卷 / 12期
关键词：
millimeter-wave FET integrated circuits; mixer noise; MMIC amplifiers; MMIC mixers; MMIC oscillators; MOD-FET integrated circuits; road vehicle radar;
D O I：
10.1109/22.739248
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A set of coplanar monolithic microwave integrated circuits for millimeter-wave sensor applications is described. It consists of a highly integrated transceiver chip, a voltage-controlled oscillator, a harmonic mixer, and a general-purpose medium-power amplifier, The circuits operate in the 76-77 GHz frequency range and have been fabricated by a production-oriented GaAs pHEMT technology, The transceiver chip combines a transmitter with 9-dBm output power and a receiver with an overall conversion gain of 1 dB, The voltage-controlled oscillator is tunable over a 0.8 GHz bandwidth. It includes a buffer amplifier and generates an output power of 10 dBm. The harmonic mixer achieves 18 dB conversion loss when mixing with the fifth harmonic of the LO signal, The two-stage MPA delivers 13 dBm of output power along with a gain of 7.5 dB, The chip set is suited for the cost effective realization of automotive radar systems as well as various sensors for industrial applications.
引用
收藏
页码：2560 / 2567
页数：8
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