STRUCTURAL AND ELECTRICAL PROPERTIES OF TiSi2/Si INTERFACES IN A CMOS TECHNOLOGY WITH SELF-ALIGNED CONTACTS.

The formation of self-aligned TiSi//2 on As-, P- and B-doped Si by rapid thermal annealing was investigated by high resolution and conventional electron microscopy, SIMS and electrical measurements. The TiSi//2/Si interface quality and the silicide film thickness strongly depend on dopant species and concentration profiles. In particular, large As doses impede the growth of TiSi//2. On the other hand, the dopant redistribution during the reaction of Ti with Si depends on the silicidation conditions. Implantation of source and drain prior to the Ti deposition has several technological advantages for LDD MOSFETs in a CMOS technology. With such a process sequence and properly adjusted implantation and silicidation parameters, low resistivity interconnects, low contact resistances and diodes with excellent I-V characteristics were obtained.