PROCESS AND DEVICE PERFORMANCE OF SUBMICROMETER-CHANNEL CMOS DEVICES USING DEEP-TRENCH ISOLATION AND SELF-ALIGNED TISI2 TECHNOLOGIES

被引：13
|
作者：
YAMAGUCHI, T
MORIMOTO, S
PARK, HK
EIDEN, GC
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1985年 / 32卷 / 02期
关键词：
D O I：
10.1109/T-ED.1985.21928
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：184 / 193
页数：10
相关论文
共 7 条
  • [1] PROCESS AND DEVICE PERFORMANCE OF SUBMICROMETER-CHANNEL CMOS DEVICES USING DEEP-TRENCH ISOLATION AND SELF-ALIGNED TISI2 TECHNOLOGIES
    YAMAGUCHI, T
    MORIMOTO, S
    PARK, HK
    EIDEN, GC
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1985, 20 (01) : 104 - 113
  • [2] PROCESS LIMITATION AND DEVICE DESIGN TRADEOFFS OF SELF-ALIGNED TISI2 JUNCTION FORMATION IN SUBMICROMETER CMOS DEVICES
    LU, CY
    SUNG, JMJ
    LIU, R
    TSAI, NS
    SINGH, R
    HILLENIUS, SJ
    KIRSCH, HC
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (02) : 246 - 254
  • [3] CHARACTERIZATION AND IMPLEMENTATION OF SELF-ALIGNED TISI2 IN SUBMICROMETER CMOS TECHNOLOGY
    PAREKH, NS
    ROEDE, H
    BOS, AA
    JONKERS, AGM
    VERHAAR, RDJ
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (01) : 88 - 94
  • [4] PLANARIZED DEEP-TRENCH PROCESS FOR SELF-ALIGNED DOUBLE POLYSILICON BIPOLAR DEVICE ISOLATION
    YU, YCS
    HACHERL, CA
    PATTON, EE
    LANE, EL
    YAMAGUCHI, T
    DOTTARAR, SS
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1990, 137 (06) : 1942 - 1950
  • [5] Agglomeration resistant self-aligned silicide process using N2 implantation into TiSi2
    Toshiba Corp, Kawasaki, Japan
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1997, 36 (6 A): : 3639 - 3643
  • [6] Agglomeration resistant self-aligned silicide process using N2 implantation into TiSi2
    Nishiyama, A
    Akasaka, Y
    Ushiku, Y
    Hishioka, K
    Suizu, Y
    Shiozaki, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (6A): : 3639 - 3643
  • [7] An All Pixel PDAF CMOS Image Sensor with 0.64μmx1.28μm Photodiode Separated by Self-aligned In-pixel Deep Trench Isolation for High AF Performance
    Choi, Sungsoo
    Lee, Kyungho
    Yun, Jungbin
    Choi, Sungho
    Lee, Seungjoon
    Park, Junghoon
    Shim, Eun Sub
    Pyo, Junghyung
    Kim, Bumsuk
    Jung, Minwook
    Lee, Yunki
    Son, Kyungmok
    Jung, Sangil
    Wang, Tae-Shick
    Choi, Yunseok
    Min, Dong-ki
    Im, Joonhyuk
    Moon, Chang-Rok
    Lee, Duckhyung
    Chang, Duckhyun
    2017 SYMPOSIUM ON VLSI TECHNOLOGY, 2017, : T104 - T105
1