Influence of crystal quality on the electronic properties of n-type 3C-SiC grown by low temperature low pressure chemical vapor deposition

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[1] Eickhoff, M.
[2] Möller, H.
[3] Stoemenos, J.
[4] Zappe, S.
[5] Kroetz, G.
[6] Stutzmann, M.
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Eickhoff, M. (Martin.Eickhoff@wsi.tu-muenchen.de) | 1600年 / American Institute of Physics Inc.卷 / 95期
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