PHOTOLUMINESCENCE SPECTROSCOPY OF ION-IMPLANTED 3C-SIC GROWN BY CHEMICAL VAPOR-DEPOSITION

被引:49
|
作者
FREITAS, JA
BISHOP, SG
EDMOND, JA
RYU, J
DAVIS, RF
机构
[1] USN, RES LAB, WASHINGTON, DC 20375 USA
[2] N CAROLINA STATE UNIV, RALEIGH, NC 27695 USA
关键词
D O I
10.1063/1.337997
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:2011 / 2016
页数:6
相关论文
共 50 条
  • [1] PHOTOLUMINESCENCE OF UNINTENTIONALLY DOPED AND N-DOPED 3C-SIC GROWN BY CHEMICAL VAPOR-DEPOSITION
    OKUMURA, H
    SHINOHARA, M
    MUNEYAMA, E
    DAIMON, H
    YAMANAKA, M
    SAKUMA, E
    MISAWA, S
    ENDO, K
    YOSHIDA, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (01): : L116 - L118
  • [2] ELECTRICAL-PROPERTIES OF UNDOPED AND ION-IMPLANTED CUBIC SIC GROWN ON SI(100) BY CHEMICAL VAPOR-DEPOSITION
    SHIBAHARA, K
    TAKEUCHI, T
    NISHINO, S
    MATSUNAMI, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1989, 28 (08): : 1341 - 1347
  • [3] GREATLY IMPROVED 3C-SIC P-N-JUNCTION DIODES GROWN BY CHEMICAL VAPOR-DEPOSITION
    NEUDECK, PG
    LARKIN, DJ
    STARR, JE
    POWELL, JA
    SALUPO, CS
    MATUS, LG
    IEEE ELECTRON DEVICE LETTERS, 1993, 14 (03) : 136 - 139
  • [4] Anomalous photoluminescence from 3C-SiC grown on Si(111) by rapid thermal chemical vapor deposition
    Shim, HW
    Kim, KC
    Seo, YH
    Nahm, KS
    Suh, EK
    Lee, HJ
    APPLIED PHYSICS LETTERS, 1997, 70 (13) : 1757 - 1759
  • [5] LOW-TEMPERATURE PHOTOLUMINESCENCE STUDIES OF CHEMICAL-VAPOR-DEPOSITION-GROWN 3C-SIC ON SI
    CHOYKE, WJ
    FENG, ZC
    POWELL, JA
    JOURNAL OF APPLIED PHYSICS, 1988, 64 (06) : 3163 - 3175
  • [6] PHOTOLUMINESCENCE OF UNINTENTIONALLY DOPED AND N-DOPED 3C-SiC GROWN BY CHEMICAL VAPOR DEPOSITION.
    Okumura, Hajime
    Shinohara, Mikiya
    Muneyama, Etsuhiro
    Daimon, Hiroshi
    Yamanaka, Mitsugu
    Sakuma, Eiichiro
    Misawa, Shunji
    Endo, Kazuhiro
    Yoshida, Sadafumi
    Japanese Journal of Applied Physics, Part 2: Letters, 1988, 27 (01): : 116 - 118
  • [7] GROWTH OF HIGH-MOBILITY 3C-SIC EPILAYERS BY CHEMICAL VAPOR-DEPOSITION
    SHINOHARA, M
    YAMANAKA, M
    DAIMON, H
    SAKUMA, E
    OKUMURA, H
    MISAWA, S
    ENDO, K
    YOSHIDA, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1988, 27 (03): : L434 - L436
  • [8] PHOTOLUMINESCENCE CHARACTERIZATION OF CUBIC SIC GROWN BY CHEMICAL VAPOR-DEPOSITION ON SI SUBSTRATES
    BISHOP, SG
    FREITAS, JA
    JOURNAL OF CRYSTAL GROWTH, 1990, 106 (01) : 38 - 46
  • [9] HIGH-TEMPERATURE ELECTRICAL-PROPERTIES OF 3C-SIC EPITAXIAL LAYERS GROWN BY CHEMICAL VAPOR-DEPOSITION
    SASAKI, K
    SAKUMA, E
    MISAWA, S
    YOSHIDA, S
    GONDA, S
    APPLIED PHYSICS LETTERS, 1984, 45 (01) : 72 - 73
  • [10] Effects of Growth Conditions on the Low Temperature Photoluminescence Spectra of (111) 3C-SiC Layers Grown by Chemical Vapor Deposition on 3C-SiC Seeds grown by the Vapor-Liquid-Solid Technique
    Zoulis, G.
    Sun, J. W.
    Jegenyes, N.
    Lorenzzi, J. C.
    Juillaguet, S.
    Souliere, V.
    Ferro, G.
    Camassel, J.
    2010 WIDE BANDGAP CUBIC SEMICONDUCTORS: FROM GROWTH TO DEVICES, 2010, 1292 : 119 - +