Influence of crystal quality on the electronic properties of n-type 3C-SiC grown by low temperature low pressure chemical vapor deposition

被引：0
|
作者：
机构：
[1] Eickhoff, M.
[2] Möller, H.
[3] Stoemenos, J.
[4] Zappe, S.
[5] Kroetz, G.
[6] Stutzmann, M.
来源：
Eickhoff, M. (Martin.Eickhoff@wsi.tu-muenchen.de) | 1600年 / American Institute of Physics Inc.卷 / 95期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
44
引用
收藏
相关论文
共 50 条
  • [41] HIGH-QUALITY UNDOPED N-TYPE GASB EPILAYERS BY LOW-TEMPERATURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
    CHEN, SM
    SU, YK
    JOURNAL OF APPLIED PHYSICS, 1993, 74 (04) : 2892 - 2895
  • [42] Structural analysis of (211) 3C-SiC on (211) Si substrates grown by chemical vapor deposition
    Nishiguchi, T
    Mukai, Y
    Nakamura, M
    Nishio, K
    Isshiki, T
    Ohshima, S
    Nishino, S
    SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2, 2004, 457-460 : 285 - 288
  • [43] Low temperature chemical vapor deposition of 3C-SiC on 6H-SiC - An x-ray triple crystal diffractometry and x-ray topography study
    Chaudhuri, J
    Ignatiev, K
    Edgar, JH
    Xie, ZY
    Gao, Y
    WIDE-BANDGAP SEMICONDUCTORS FOR HIGH POWER, HIGH FREQUENCY AND HIGH TEMPERATURE, 1998, 512 : 169 - 174
  • [44] Growth of high quality 3C-SiC on a Si(111) substrate by chemical vapor deposition
    Kim, KC
    Shim, HW
    Suh, EK
    Lee, HJ
    Nahm, KS
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 1998, 32 (04) : 588 - 593
  • [45] HIGH-TEMPERATURE OHMIC CONTACT METALLIZATIONS FOR N-TYPE 3C-SIC
    SHOR, JS
    WEBER, RA
    PROVOST, LG
    GOLDSTEIN, D
    KURTZ, AD
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1994, 141 (02) : 579 - 581
  • [46] LOW-TEMPERATURE LUMINESCENT PROPERTIES OF DEGENERATE P-TYPE GAAS GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
    CHEN, HD
    FENG, MS
    CHEN, PA
    LIN, KC
    WU, CC
    JOURNAL OF APPLIED PHYSICS, 1994, 75 (04) : 2210 - 2214
  • [47] Effects of the gas feeding method on the properties of 3C-SiC/Si(111) grown by rapid thermal chemical vapor deposition
    Shim, HW
    Nahm, KS
    Suh, EK
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 1998, 33 (02) : 154 - 157
  • [48] Piezoresistive properties of single crystalline, polycrystalline, and nanocrystalline n-type 3C-SiC
    Eickhoff, M
    Möller, M
    Kroetz, G
    Stutzmann, M
    JOURNAL OF APPLIED PHYSICS, 2004, 96 (05) : 2872 - 2877
  • [49] High quality epitaxial Si grown by a simple low pressure chemical vapor deposition at 550 degrees C
    Chin, A
    Lin, BC
    Chen, WJ
    APPLIED PHYSICS LETTERS, 1996, 69 (11) : 1617 - 1619
  • [50] Fabrication of SiC-on-Insulator (SiCOI) Layers by Chemical Vapor Deposition of 3C-SiC on Si-in-Insulator Substrates at Low Deposition Temperatures of 1120 °C
    Steiner, Johannes
    Schultheiss, Jana
    Wang, Shouzhong
    Wellmann, Peter J.
    CRYSTALS, 2023, 13 (11)
12345