LOW-TEMPERATURE SILICON EPITAXIAL GROWTH BY CO2 LASER CVD USING SiH4 GAS.

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Meguro, Takashi [1 ]
Ishihara, Yukihito [1 ]
Itoh, Tadatsugu [1 ]
Tashiro, Hideo [1 ]
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[1] Waseda Univ, Tokyo, Jpn, Waseda Univ, Tokyo, Jpn
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| 1600年 / 25期
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