LOW-TEMPERATURE SILICON EPITAXIAL GROWTH BY CO2 LASER CVD USING SiH4 GAS.

被引：0
|
作者：
Meguro, Takashi [1 ]
Ishihara, Yukihito [1 ]
Itoh, Tadatsugu [1 ]
Tashiro, Hideo [1 ]
机构：
[1] Waseda Univ, Tokyo, Jpn, Waseda Univ, Tokyo, Jpn
来源：
| 1600年 / 25期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [21] Influence of hydrogen dilution on low-temperature polycrystalline silicon formation using RF excitation SiH4/H2 plasma
    Yao, RH
    Lin, XY
    Wu, P
    Yu, CY
    Shi, WZ
    Lin, KX
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2000, 62 (1-2) : 187 - 192
  • [22] Formation of Higher Silanes in Low-Temperature Silane (SiH4) Ices
    Tarczay, Gyoegy
    Foestel, Marko
    Maksyutenko, Pavlo
    Kaiser, Ralf I.
    INORGANIC CHEMISTRY, 2016, 55 (17) : 8776 - 8785
  • [23] Low temperature Si homoepitaxy by a reactive CVD with a SiH4/F2 mixture.
    Minowa, Akihisa
    Kondo, Michio
    AMORPHOUS AND POLYCRYSTALLINE THIN FILM SILICON SCIENCE AND TECHNOLOGY - 2009, VOL 1153, 2009, 1153
  • [24] SYNCHROTRON RADIATION-EXCITED CVD OF SILICON-NITRIDE FILMS - A COMPARISON OF SIH4 + NH3 AND SIH4 + N2 GAS SYSTEMS
    KYURAGI, H
    URISU, T
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (8B) : C455 - C456
  • [25] SELECTIVE SILICON EPITAXIAL-GROWTH AT 800-DEGREES-C BY ULTRALOW-PRESSURE CHEMICAL VAPOR-DEPOSITION USING SIH4 AND SIH4/H2
    YEW, TR
    REIF, R
    JOURNAL OF APPLIED PHYSICS, 1989, 65 (06) : 2500 - 2507
  • [26] EPITAXIAL-GROWTH OF SILICON FROM SIH4 IN TEMPERATURE-RANGE 800-1150 DEGREES C
    TOWNSEND, WG
    UDDIN, ME
    SOLID-STATE ELECTRONICS, 1973, 16 (01) : 39 - 42
  • [27] Vibrational spectra of monoisotopic SiH4 and GeH4 in low-temperature matrices
    T. D. Kolomiitsova
    K. F. Savvateev
    K. G. Tokhadze
    D. N. Shchepkin
    P. G. Sennikov
    I. A. Vel’muzhova
    A. D. Bulanov
    Optics and Spectroscopy, 2012, 112 : 563 - 573
  • [28] Vibrational spectra of monoisotopic SiH4 and GeH4 in low-temperature matrices
    Kolomiitsova, T. D.
    Savvateev, K. F.
    Tokhadze, K. G.
    Shchepkin, D. N.
    Sennikov, P. G.
    Vel'muzhova, I. A.
    Bulanov, A. D.
    OPTICS AND SPECTROSCOPY, 2012, 112 (04) : 563 - 573
  • [29] CO2 utilization in low temperature plasma conversion of natural gas.
    Mallinson, RG
    Supat, K
    Chavdej, S
    Lobban, L
    Larkin, D
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2002, 223 : U579 - U579
  • [30] Effects of the addition of SiF4 to the SiH4 feed gas for depositing polycrystalline silicon films at low temperature
    Syed, M
    Inokuma, T
    Kurata, Y
    Hasegawa, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (11): : 6625 - 6632
12345