LOW-TEMPERATURE SILICON EPITAXIAL GROWTH BY CO2 LASER CVD USING SiH4 GAS.

被引：0

作者：

Meguro, Takashi ^{[1
]}

Ishihara, Yukihito ^{[1
]}

Itoh, Tadatsugu ^{[1
]}

Tashiro, Hideo ^{[1
]}

机构：

[1] Waseda Univ, Tokyo, Jpn, Waseda Univ, Tokyo, Jpn

来源：

| 1600年 / 25期

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[31] Effects of the addition of SiF4 to the SiH4 feed gas for depositing polycrystalline silicon films at low temperature
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