Electron cyclotron resonance plasma-enhanced metalorganic chemical vapor deposition of tantalum oxide thin films on silicon near room temperature

被引：0
|
作者：
Cornell Univ, Ithaca, United States [1 ]
机构：
来源：
J Am Ceram Soc | / 6卷 / 1585-1592期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [41] Mechanical and optical properties of amorphous silicon nitride-based films prepared by electron cyclotron resonance plasma-enhanced chemical vapor deposition
    Ahammou, Brahim
    Bhattacharyya, Paramita
    Levallois, Christophe
    Azmi, Fahmida
    Landesman, Jean-Pierre
    Mascher, Peter
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2023, 41 (05):
  • [42] Conduction and trapping mechanisms in SiO2 films grown near room temperature by multipolar electron cyclotron resonance plasma enhanced chemical vapor deposition
    Isai, GI
    Holleman, J
    Wallinga, H
    Woerlee, PH
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2004, 22 (03): : 1022 - 1029
  • [43] Electrical properties of PZT thin films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition
    Kim, ST
    Kim, JW
    Jung, SW
    Shin, JS
    Ahn, ST
    Lee, WJ
    MATERIALS CHEMISTRY AND PHYSICS, 1996, 45 (02) : 155 - 158
  • [44] Electrical properties of PZT thin films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition
    Korea Advanced Inst of Science and, Technology, Taejon, Korea, Republic of
    Mater Chem Phys, 2 (155-158):
  • [45] Wet etching studies of silicon nitride thin films deposited by electron cyclotron resonance (ECR) plasma enhanced chemical vapor deposition
    Sundaram, KB
    Sah, RE
    Baumann, H
    Balachandran, K
    Todi, RM
    MICROELECTRONIC ENGINEERING, 2003, 70 (01) : 109 - 114
  • [46] Characterization of Palladium-based Thin Films Prepared by Plasma-enhanced Metalorganic Chemical Vapor Deposition
    Kapica, Ryszard
    Redzynia, Wiktor
    Tyczkowski, Jacek
    MATERIALS SCIENCE-MEDZIAGOTYRA, 2012, 18 (02): : 128 - 131
  • [47] Plasma metalorganic chemical vapor deposition of indium oxide thin films
    Maruyama, Toshiro, 1600, (28):
  • [48] PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION OF SILICON, GERMANIUM, AND TIN NITRIDE THIN-FILMS FROM METALORGANIC PRECURSORS
    HOFFMAN, DM
    RANGARAJAN, P
    ATHAVALE, SD
    ECONOMOU, DJ
    LIU, JR
    ZHENG, ZS
    CHU, WK
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1995, 13 (03): : 820 - 825
  • [49] Low temperature deposition of Ba1-xSrxTiO3 thin films by ECR plasma-enhanced metalorganic chemical vapor deposition
    Gilbert, SR
    Summerfelt, SR
    Moise, TS
    Anthony, JM
    INTEGRATED FERROELECTRICS, 1998, 21 (1-4) : 355 - 366
  • [50] Preparation of polycrystalline silicon films by plasma-enhanced chemical vapor deposition at low temperature
    Deng, Wan-Ting
    Wu, Ai-Min
    Zhang, Guang-Ying
    Qin, Fu-Wen
    Dong, Chuang
    Jiang, Xin
    Yuanzineng Kexue Jishu/Atomic Energy Science and Technology, 2007, 41 (SUPPL.): : 436 - 440
12345