Preparation of polycrystalline silicon films by plasma-enhanced chemical vapor deposition at low temperature

被引：0

作者：

Deng, Wan-Ting ^{[1
,2
]}

Wu, Ai-Min ^{[1
,2
]}

Zhang, Guang-Ying ^{[1
,2
]}

Qin, Fu-Wen ^{[1
,3
]}

Dong, Chuang ^{[1
,2
]}

Jiang, Xin ^{[1
,2
,4
]}

机构：

[1] State Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Dalian University of Technology, Dalian 116024, China

[2] School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024, China

[3] School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024, China

[4] Institute of Materials Engineering, Siegen University, Siegen 57076, Germany

来源：

Yuanzineng Kexue Jishu/Atomic Energy Science and Technology | 2007年 / 41卷 / SUPPL.期

关键词：

D O I：

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学科分类号：

摘要：

引用

页码：436 / 440

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