Electron cyclotron resonance plasma-enhanced metalorganic chemical vapor deposition of tantalum oxide thin films on silicon near room temperature

被引：0
|
作者：
Cornell Univ, Ithaca, United States [1 ]
机构：
来源：
J Am Ceram Soc | / 6卷 / 1585-1592期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [21] Effect of water absorption on the residual stress in fluorinated silicon-oxide thin films fabricated by electron-cyclotron-resonance plasma-enhanced chemical-vapor deposition
    Kim, SP
    Choi, SK
    Park, Y
    Chung, I
    APPLIED PHYSICS LETTERS, 2001, 79 (02) : 185 - 187
  • [22] Self-limiting growth of tantalum oxide thin films by pulsed plasma-enhanced chemical vapor deposition
    Seman, Michael
    Robbins, Joshua J.
    Agarwal, Sumit
    Wolden, Colin A.
    APPLIED PHYSICS LETTERS, 2007, 90 (13)
  • [23] Deposition of aluminium nitride films by electron cyclotron resonance plasma-enhanced chemical vapour deposition
    Ecke, G
    Eichhorn, G
    Pezoldt, J
    Reinhold, C
    Stauden, T
    Supplieth, F
    SURFACE & COATINGS TECHNOLOGY, 1998, 98 (1-3): : 1503 - 1509
  • [24] Electrical properties of silicon nitride films grown on a SiGe layer by distributed electron cyclotron resonance plasma-enhanced chemical vapor deposition
    DufourGergam, E
    Meyer, F
    Delmotte, F
    Hugon, MC
    Agius, B
    Warren, P
    Dutartre, D
    THIN SOLID FILMS, 1997, 294 (1-2) : 214 - 216
  • [25] Silicon nitride thin films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition for micromechanical system applications
    Biasotto, C.
    Diniz, J. A.
    Daltrini, A. M.
    Moshkalev, S. A.
    Monteiro, M. J. R.
    THIN SOLID FILMS, 2008, 516 (21) : 7777 - 7782
  • [26] NaCl-type oxide films prepared by plasma-enhanced metalorganic chemical vapor deposition
    Fujii, Eiji, 1600, (32):
  • [27] The origin of intrinsic stress and its relaxation for SiOF thin films deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition
    Kim, SP
    Choi, SK
    THIN SOLID FILMS, 2000, 379 (1-2) : 259 - 264
  • [28] Low-temperature preparation of SrBi2Ta2O9 thin films by electron cyclotron resonance plasma-enhanced metalorganic chemical vapor deposition and their electrical properties
    Nukaga, Norimasa, 1600, (JJAP, Tokyo):
  • [29] Low-temperature preparation of SrBi2Ta2O9 thin films by electron cyclotron resonance plasma-enhanced metalorganic chemical vapor deposition and their electrical properties
    Nukaga, N
    Mitsuya, M
    Funakubo, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2000, 39 (9B): : 5496 - 5500
  • [30] Applications of plasma-enhanced metalorganic chemical vapor deposition
    Smaglik, Nathan
    Pokharel, Nikhil
    Ahrenkiel, Phil
    JOURNAL OF CRYSTAL GROWTH, 2020, 535 (535)
12345