Simulation of high-concentration boron diffusion in silicon during post-implantation annealing

We have simulated the transient enhanced diffusion (TED) and electrical activation of high-concentration boron (B) in silicon during post-implantation annealing. Based on the models for B diffusion, for TED by self-interstitial clusters, and for B clustering, a unified simulation is done, taking into account implantation-induced dislocations as a sink for self-interstitials and the solid solubility limit of B. To establish the initial profiles for higher doses, we used the maximum area density of self-interstitials and B concentration effective for the TED and B clustering. We have satisfactorily fitted B depth profiles at different doses (5×1014-5×1015 cm-2) in a wide range of experimental conditions (800-1000 °C and 10 s-8 h).