共 36 条
- [1] Simulation method for buried oxide formation of separation by implanted oxygen structure during post-implantation thermal annealing JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (4B): : 2380 - 2384
- [3] Oxygen gettering and thermal donor formation at post-implantation annealing of hydrogen implanted Czochralski silicon DEFECTS AND DIFFUSION IN SILICON PROCESSING, 1997, 469 : 95 - 100
- [4] Oxygen gettering and thermal donor formation at post-implantation annealing of silicon EARLY STAGES OF OXYGEN PRECIPITATION IN SILICON, 1996, 17 : 455 - 462
- [5] Post-implantation thermal annealing effect on the gate oxide of triple-well-structure Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2002, 41 (5 A): : 2878 - 2880
- [6] Post-implantation thermal annealing effect on the gate oxide of triple-well-structure JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002, 41 (5A): : 2878 - 2880
- [7] SIMS study on redistribution of implanted impurities in InSb and InAs during post-implantation annealing NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1996, 111 (3-4): : 281 - 284
- [8] Formation of buried oxide in silicon using separation by plasma implantation of oxygen Appl Phys Lett, 16 (2361):
- [10] Simulation of high-concentration boron diffusion in silicon during post-implantation annealing JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (6A): : 3433 - 3439