BEHAVIOR OF IMPLANTED ARSENIC DURING RAPID THERMAL ANNEALING OF Ti AND Si.

被引：0
|
作者：
Ponpon, J.P. [1 ]
Saulnier, A. [1 ]
Stuck, R. [1 ]
机构：
[1] Cent de Recherches Nucleaires, Strasbourg, Fr, Cent de Recherches Nucleaires, Strasbourg, Fr
来源：
Applied physics. A, Solids and surfaces | 1987年 / A 44卷 / 03期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
16
引用
收藏
页码：227 / 232
相关论文
共 50 条
  • [31] RAPID THERMAL ANNEALING OF ARSENIC IMPLANTED MONOCRYSTALLINE SILICON - DOPANT REDISTRIBUTION AND OUTDIFFUSION
    CHAUSSEMY, G
    GONTRAND, C
    KUMAR, SN
    CANUT, B
    BARBIER, D
    LAUGIER, A
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1991, 124 (01): : 103 - 114
  • [32] RAPID THERMAL ANNEALING OF HIGH-DOSE ARSENIC-IMPLANTED SILICON
    KOGLER, R
    WIESER, E
    OTTO, G
    KNOTHE, P
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1990, 51 (01): : 53 - 59
  • [33] DOPANT PROFILE CONTROL BY RAPID THERMAL ANNEALING IN BORON AND ARSENIC IMPLANTED SILICON
    NARAYAN, J
    HOLLAND, DW
    EBY, R
    WORTMAN, JJ
    OZGUZ, V
    ROZGONYI, GA
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (11) : 1585 - 1585
  • [34] EFFECT OF FURNACE PREANNEAL AND RAPID THERMAL ANNEALING ON ARSENIC-IMPLANTED SILICON
    KWOR, R
    KWONG, DL
    HO, CC
    TSAUR, BY
    BAUMANN, S
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (05) : 1201 - 1206
  • [35] RAPID THERMAL ANNEALING OF SI-IMPLANTED GAAS WITH TRIMETHYLARSENIC OVERPRESSURE
    REYNOLDS, S
    VOOK, DW
    OPYD, WG
    GIBBONS, JF
    APPLIED PHYSICS LETTERS, 1987, 51 (12) : 916 - 918
  • [36] An effect of rapid thermal annealing on the structure of TiN/Ti/Si
    Yemelianenko, Yuri S.
    Kolos, Victor V.
    Markevich, Maria I.
    Stelmakh, Viaczeslav F.
    Chaplanov, Arkady M.
    Karwat, Czeslaw
    PRZEGLAD ELEKTROTECHNICZNY, 2010, 86 (07): : 26 - 28
  • [37] Influence of thermal nitridation on the diffusion of arsenic during rapid thermal annealing
    Lerch, W
    Stolwijk, NA
    Marcus, SD
    Downey, DF
    Schäfer, M
    ADVANCES IN RAPID THERMAL PROCESSING, 1999, 99 (10): : 141 - 150
  • [38] Thermal stability of intermediate band behavior in Ti implanted Si
    Olea, J.
    Pastor, D.
    Martil, I.
    Gonzalez-Diaz, G.
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2010, 94 (11) : 1907 - 1911
  • [39] TRANSIENT ENHANCED-DIFFUSION OF ION-IMPLANTED B IN SI DURING RAPID THERMAL ANNEALING
    MIYAKE, M
    AOYAMA, S
    KIUCHI, K
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (8B) : C451 - C451
  • [40] CAPLESS RAPID THERMAL ANNEALING IN AS-OVERPRESSURE AND ITS ANNEALING MECHANISM FOR SI IMPLANTED INTO GAAS
    SUZUKI, T
    KOMATSUZAKI, S
    KASAHARA, J
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1990, (106): : 539 - 544
12345