Magnetotransport properties of Si-δ-doped InSb layers grown on GaAs

被引：0
|
作者：
De, Keyser, A.
Bogaerts, R.
Van Bockstal, L.
Hoeks, W.
Herlach, F.
Karavolas, V.C.
Peeters, F.M.
van de Graaf, W.
Borghs, G.
机构：
来源：
Physica B: Condensed Matter | 1995年 / 211卷 / 1-4期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [21] THE PHOTOLUMINESCENCE SPECTRA OF THIN SI-DOPED GAAS-LAYERS GROWN BY MBE
    PASTRNAK, J
    OSWALD, J
    LAZNICKA, M
    BOSACCHI, A
    SALOKATVE, A
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1990, 118 (02): : 567 - 576
  • [22] Photoluminescence of Zn- and Si-doped GaAs epitaxial layers grown by MOCVD
    Hudait, MK
    Modak, P
    Hardikar, S
    Rao, KSRK
    Krupanidhi, SB
    PHYSICS OF SEMICONDUCTOR DEVICES, VOLS 1 AND 2, 1998, 3316 : 312 - 316
  • [23] CHARACTERIZATION OF GAAS GROWN ON SI EPITAXIAL LAYERS ON GAAS SUBSTRATES
    ADOMI, K
    STRITE, S
    MORKOC, H
    NAKAMURA, Y
    OTSUKA, N
    JOURNAL OF APPLIED PHYSICS, 1991, 69 (01) : 220 - 225
  • [24] Spin lifetime in high quality InSb epitaxial layers grown on GaAs
    Litvinenko, K. L.
    Nikzad, L.
    Allam, J.
    Murdin, B. N.
    Pidgeon, C. R.
    Harris, J. J.
    Zhang, T.
    Cohen, L. F.
    JOURNAL OF APPLIED PHYSICS, 2007, 101 (08)
  • [25] Spin lifetime in high quality InSb epitaxial layers grown on GaAs
    Litvinenko, K.L.
    Nikzad, L.
    Allam, J.
    Murdin, B.N.
    Pidgeon, C.R.
    Harris, J.J.
    Zhang, T.
    Cohen, L.F.
    Journal of Applied Physics, 2007, 101 (08):
  • [26] The properties of ZnSe layers grown on GaAs and Si substrates by atomic layer epitaxy
    Hsu, CT
    MATERIALS CHEMISTRY AND PHYSICS, 1998, 52 (03) : 240 - 245
  • [27] PROPERTIES OF GAAS-SI EPITAXIAL LAYERS GROWN IN A MULTIWAFER MOCVD REACTOR
    KANBER, H
    ZIELINSKI, T
    WHELAN, JM
    JOURNAL OF ELECTRONIC MATERIALS, 1985, 14 (06) : 769 - 781
  • [28] ELECTRICAL-PROPERTIES OF INDIUM DOPED GAAS-LAYERS GROWN BY MBE
    MISSOUS, M
    SINGER, KE
    NICHOLAS, DJ
    JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) : 314 - 318
  • [29] Magnetotransport properties of (Ga,Mn)As grown on GaAs(411)A substrates
    Omiya, T
    Matsukura, F
    Shen, A
    Ohno, Y
    Ohno, H
    PHYSICA E, 2001, 10 (1-3): : 206 - 209
  • [30] BE, S, SI, AND NE ION-IMPLANTATION IN INSB GROWN ON GAAS
    RAO, MV
    THOMPSON, PE
    ECHARD, R
    MULPURI, S
    BERRY, AK
    DIETRICH, HB
    JOURNAL OF APPLIED PHYSICS, 1991, 69 (08) : 4228 - 4233
12345