Spin lifetime in high quality InSb epitaxial layers grown on GaAs

被引：0
|
作者：
Litvinenko, K.L. [1 ]
Nikzad, L. [1 ]
Allam, J. [1 ]
Murdin, B.N. [1 ]
Pidgeon, C.R. [2 ]
Harris, J.J. [3 ]
Zhang, T. [3 ]
Cohen, L.F. [3 ]
机构：
[1] Advanced Technology Institute, University of Surrey, Guildford GU2 7XH, United Kingdom
[2] Department of Physics, Heriot-Watt University, Edinburgh EH14 4AS, United Kingdom
[3] Blackett Laboratory, Imperial College London, Prince Consort Road, London SW7 2BZ, United Kingdom
来源：
Journal of Applied Physics | 2007年 / 101卷 / 08期
关键词：
Epitaxial films;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Conference article (CA)
引用
收藏
相关论文
共 50 条
  • [1] Spin lifetime in high quality InSb epitaxial layers grown on GaAs
    Litvinenko, K. L.
    Nikzad, L.
    Allam, J.
    Murdin, B. N.
    Pidgeon, C. R.
    Harris, J. J.
    Zhang, T.
    Cohen, L. F.
    JOURNAL OF APPLIED PHYSICS, 2007, 101 (08)
  • [2] Spin lifetime in InAs epitaxial layers grown on GaAs
    Litvinenko, K. L.
    Murdin, B. N.
    Allam, J.
    Pidgeon, C. R.
    Zhang, Tong
    Harris, J. J.
    Cohen, L. F.
    Eustace, D. A.
    McComb, D. W.
    PHYSICAL REVIEW B, 2006, 74 (07):
  • [3] High carrier lifetime InSb grown on GaAs substrates
    Michel, E
    Mohseni, H
    Kim, JD
    Wojkowski, J
    Sandven, J
    Xu, J
    Razeghi, M
    Bredthauer, R
    Vu, P
    Mitchel, W
    Ahoujja, M
    APPLIED PHYSICS LETTERS, 1997, 71 (08) : 1071 - 1073
  • [4] High quality InxGa1-xAs Epitaxial layers grown on GaAs by MOVPE
    van Dyk, EE
    Leitch, AWR
    Neethling, JH
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2002, 189 (01): : 223 - 231
  • [5] MATERIAL PROPERTIES OF HIGH-QUALITY GAAS EPITAXIAL LAYERS GROWN ON SI SUBSTRATES
    FISCHER, R
    MORKOC, H
    NEUMANN, DA
    ZABEL, H
    CHOI, C
    OTSUKA, N
    LONGERBONE, M
    ERICKSON, LP
    JOURNAL OF APPLIED PHYSICS, 1986, 60 (05) : 1640 - 1647
  • [6] MORPHOLOGY OF GAAS EPITAXIAL LAYERS GROWN BY MOCVD
    MORI, H
    TAKAGISHI, S
    JOURNAL OF CRYSTAL GROWTH, 1984, 69 (01) : 23 - 28
  • [7] HOLE LIFETIME IN EPITAXIAL N-GE LAYERS GROWN ON P-GAAS SUBSTRATES
    SCHULZE, RG
    KRUSE, PW
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1968, 13 (03): : 498 - &
  • [8] CHARACTERIZATION OF GAAS GROWN ON SI EPITAXIAL LAYERS ON GAAS SUBSTRATES
    ADOMI, K
    STRITE, S
    MORKOC, H
    NAKAMURA, Y
    OTSUKA, N
    JOURNAL OF APPLIED PHYSICS, 1991, 69 (01) : 220 - 225
  • [9] High-quality ZnSSeTe epitaxial layers grown by MBE
    Chen, WR
    JOURNAL OF CRYSTAL GROWTH, 2004, 265 (3-4) : 525 - 529
  • [10] High quality GaAs epitaxial layers grown from Ga-As-Bi solutions by liquid phase epitaxy
    Anna Univ, Madras, India
    Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap, 6 A (3385-3388):
12345