Spin lifetime in high quality InSb epitaxial layers grown on GaAs

被引:0
|
作者
Litvinenko, K.L. [1 ]
Nikzad, L. [1 ]
Allam, J. [1 ]
Murdin, B.N. [1 ]
Pidgeon, C.R. [2 ]
Harris, J.J. [3 ]
Zhang, T. [3 ]
Cohen, L.F. [3 ]
机构
[1] Advanced Technology Institute, University of Surrey, Guildford GU2 7XH, United Kingdom
[2] Department of Physics, Heriot-Watt University, Edinburgh EH14 4AS, United Kingdom
[3] Blackett Laboratory, Imperial College London, Prince Consort Road, London SW7 2BZ, United Kingdom
来源
Journal of Applied Physics | 2007年 / 101卷 / 08期
关键词
Epitaxial films;
D O I
暂无
中图分类号
学科分类号
摘要
Conference article (CA)
引用
收藏
相关论文
共 50 条
  • [41] High-quality epitaxial MnSi(111) layers grown in the presence of an Sb flux
    Matsuda, K
    Tatsuoka, H
    Matsunaga, K
    Isaji, K
    Kuwabara, H
    Brown, PD
    Xin, Y
    Dunin-Borkowski, R
    Humphreys, CJ
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1998, 37 (12A): : 6556 - 6561
  • [42] High-quality epitaxial MnSi(111) layers grown in the presence of an Sb flux
    Matsuda, Koji
    Tatsuoka, Hirokazu
    Matsunaga, Kazuharu
    Isaji, Koji
    Kuwabara, Hiroshi
    Brown, Paul D.
    Xin, Yah
    Dunin-Borkowski, Rafal
    Humphreys, Colin J.
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1998, 37 (12 A): : 6556 - 6561
  • [43] High Quality Zinc Sulfide Epitaxial Layers Grown by Metalorganic Chemical Vapour Deposition
    Fan Guanghan Liao Qiwei Fan Xiwu Zhang Zhishun Li Mei Zhang Jiying Changchun Institute of Physics
    RareMetals, 1989, (02) : 37 - 42
  • [44] RESIDUAL IMPURITIES IN HIGH-PURITY GAAS EPITAXIAL LAYERS GROWN BY LIQUID-PHASE EPITAXY
    MORKOC, H
    EASTMAN, LF
    WOODARD, D
    THIN SOLID FILMS, 1980, 71 (02) : 245 - 248
  • [45] Evaluations of carrier lifetime in silicon epitaxial layers grown on lightly doped substrates
    Takahashi, H
    Maekawa, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (7A): : 3854 - 3859
  • [46] Evaluations of carrier lifetime in silicon epitaxial layers grown on lightly doped substrates
    Takahashi, Hidenori
    Maekawa, Takao
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 2000, 39 (7 A): : 3854 - 3859
  • [47] Optical and electrophysical properties of epitaxial layers GaAs1-xNx grown on GaAs by MOVPE
    Daniltsev, VM
    Drozdov, YN
    Murel, AV
    Khrykin, OI
    Shashkin, VI
    Revin, DG
    Gaponova, DM
    IZVESTIYA AKADEMII NAUK SERIYA FIZICHESKAYA, 2002, 66 (02): : 193 - 195
  • [48] IMPROVED SURFACE QUALITY OF SOLUTION GROWN GAAS AND PB1-XSNXTE EPITAXIAL LAYERS - NEW TECHNIQUE
    LONGO, JT
    HARRIS, JS
    CHU, JC
    GERTNER, ER
    JOURNAL OF CRYSTAL GROWTH, 1972, 15 (02) : 107 - &
  • [49] DOPING OF GAAS EPITAXIAL LAYERS GROWN ON (100)GAAS BY CLOSE-SPACED VAPOR TRANSPORT
    KOSKIAHDE, E
    COSSEMENT, D
    PAYNTER, R
    DODELET, JP
    CANADIAN JOURNAL OF PHYSICS, 1989, 67 (04) : 251 - 258
  • [50] Structural and optical properties of InSb epitaxial films grown on GaAs(100) substrates at low temperature
    Kim, TW
    Bae, HC
    Park, HL
    APPLIED PHYSICS LETTERS, 1999, 74 (03) : 380 - 382