Spin lifetime in high quality InSb epitaxial layers grown on GaAs

被引：0

作者：

Litvinenko, K.L. ^{[1
]}

Nikzad, L. ^{[1
]}

Allam, J. ^{[1
]}

Murdin, B.N. ^{[1
]}

Pidgeon, C.R. ^{[2
]}

Harris, J.J. ^{[3
]}

Zhang, T. ^{[3
]}

Cohen, L.F. ^{[3
]}

机构：

[1] Advanced Technology Institute, University of Surrey, Guildford GU2 7XH, United Kingdom

[2] Department of Physics, Heriot-Watt University, Edinburgh EH14 4AS, United Kingdom

[3] Blackett Laboratory, Imperial College London, Prince Consort Road, London SW7 2BZ, United Kingdom

来源：

Journal of Applied Physics | 2007年 / 101卷 / 08期

关键词：

Epitaxial films;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Conference article (CA)

引用

共 50 条

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