Preparation of low-resistivity α-Ta thin films on (001) Si by conventional DC magnetron sputtering

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作者：
机构：
[1] Shiojiri, Masayuki
[2] Shinkai, Satoko
[3] Sasaki, Katsutaka
[4] Yanagisawa, Hideto
[5] Abe, Yoshio
来源：
Shinkai, S. | 1600年 / Japan Society of Applied Physics卷 / 42期
关键词：
Crystal structure - Electric conductivity of solids - Interfacial energy - Ion beams - Ion bombardment - Magnetron sputtering - Optical microscopy - Semiconducting silicon - Tantalum - X ray diffraction analysis;
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摘要：
We have examined the preparation conditions of low-resistivity α-Ta thin films on (001) Si by conventional dc magnetron sputtering without bias sputtering or ion beam radiation. As a result, when the sputtering conditions at substrate temperatures above 400°C and sputtering dc powers above 50 W are satisfied, α-Ta films can be grown in a single-oriented (110) state on (001) Si by conventional dc sputtering to minimize the surface energy.
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