Preparation of low-resistivity α-Ta thin films on (001) Si by conventional DC magnetron sputtering

被引：0
|
作者：
机构：
[1] Shiojiri, Masayuki
[2] Shinkai, Satoko
[3] Sasaki, Katsutaka
[4] Yanagisawa, Hideto
[5] Abe, Yoshio
来源：
Shinkai, S. | 1600年 / Japan Society of Applied Physics卷 / 42期
关键词：
Crystal structure - Electric conductivity of solids - Interfacial energy - Ion beams - Ion bombardment - Magnetron sputtering - Optical microscopy - Semiconducting silicon - Tantalum - X ray diffraction analysis;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
We have examined the preparation conditions of low-resistivity α-Ta thin films on (001) Si by conventional dc magnetron sputtering without bias sputtering or ion beam radiation. As a result, when the sputtering conditions at substrate temperatures above 400°C and sputtering dc powers above 50 W are satisfied, α-Ta films can be grown in a single-oriented (110) state on (001) Si by conventional dc sputtering to minimize the surface energy.
引用
收藏
相关论文
共 50 条
  • [41] STRUCTURE AND ELECTRICAL RESISTIVITY DEPENDENCE OF MOLYBDENUM THIN FILMS DEPOSITED BY DC MODULATED PULSED MAGNETRON SPUTTERING
    Wicher, B.
    Chodun, R.
    Nowakowska-Langier, K.
    Okrasa, S.
    Krol, K.
    Minikayev, R.
    Strzelecki, G.
    Zdunek, K.
    ARCHIVES OF METALLURGY AND MATERIALS, 2018, 63 (03) : 1339 - 1344
  • [42] Preparation of AZO Thin Films by Magnetron Sputtering at Low Temperature and Their Textured Structures
    Zhang, Kuanxiang (zkxaaahantian@163.com), 1600, Science Press (46):
  • [43] Preparation of AZO Thin Films by Magnetron Sputtering at Low Temperature and Their Textured Structures
    Zhang, Kuanxiang
    Peng, Shou
    Yao, Tingting
    Cao, Xin
    Jin, Kewu
    Xu, Genbao
    RARE METAL MATERIALS AND ENGINEERING, 2017, 46 (03) : 818 - 823
  • [44] Resistivity of Si-Ni and Si-Ta layers made by magnetron sputtering method
    Berlicki, TM
    Beensh-Marchwicka, G
    Prociów, EL
    Osadnik, SJ
    VACUUM, 2002, 65 (02) : 169 - 175
  • [45] PROPERTIES OF Ta2O5 THIN FILMS DEPOSITED BY DC REACTIVE MAGNETRON SPUTTERING
    Zhou Jicheng
    Luo Ditian
    Li Youzhen
    Liu Zheng
    INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2009, 23 (27): : 5275 - 5282
  • [46] Study of amorphous Ta2O5 thin films by DC magnetron reactive sputtering
    Chen, K
    Nielsen, M
    Yang, GR
    Rymaszewski, EJ
    Lu, TM
    JOURNAL OF ELECTRONIC MATERIALS, 1997, 26 (04) : 397 - 401
  • [47] Preparation of low resistivity tantalum film deposited by magnetron sputtering
    Shao, Hua
    Wang, Wen-Dong
    Liu, Xun-Chun
    Xia, Yang
    Gongneng Cailiao/Journal of Functional Materials, 2013, 44 (18): : 2625 - 2629
  • [48] Study of amorphous Ta2O5 thin films by DC magnetron reactive sputtering
    K. Chen
    M. Nielsen
    G. R. Yang
    E. J. Rymaszewski
    T. -M. Lu
    Journal of Electronic Materials, 1997, 26 : 397 - 401
  • [49] Low-resistivity ZnO:F:Al transparent thin films
    Altamirano-Juárez, DC
    Torres-Delgado, G
    Jiménez-Sandoval, S
    Jiménez-Sandoval, O
    Castanedo-Pérez, R
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2004, 82 (1-2) : 35 - 43
  • [50] Low-temperature resistivity and microstructure of reactive magnetron co-sputtered Ta-Si-N thin films
    Chung, C. K.
    Nautiyal, A.
    Chen, T. S.
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2010, 43 (29)
12345