共 50 条
- [1] Determination of hydrogen in 6H-SiC epitaxial layers by the 15N nuclear reaction analysis technique NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1999, 155 (1-2): : 132 - 136
- [2] Epitaxial 6H-SiC layers as defectors of nuclear particles SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 : 1447 - 1450
- [7] Defect evolution in ion irradiated 6H-SiC epitaxial layers SILICON CARBIDE AND RELATED MATERIALS 2004, 2005, 483 : 485 - 488
- [8] Deuterium incorporation in acceptor doped epitaxial layers of 6H-SiC SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 761 - 764
- [9] Deuterium incorporation in acceptor doped epitaxial layers of 6H-SiC Materials Science Forum, 1998, 264-268 (pt 2): : 761 - 764