Determination of hydrogen in 6H-SiC epitaxial layers by the 15N nuclear reaction analysis technique

被引：0
|
作者：
Portmann, J. [1 ]
Haug, C. [1 ]
Brenn, R. [1 ]
Schneider, J. [2 ]
Rottner, K. [3 ]
Helbig, R. [3 ]
机构：
[1] Fac. of Phys. and Mat. Res. Center, Univ. Freiburg, Hermann-Herder-S., Freiburg, Germany
[2] Materials Research Center, University of Freiburg, D-79104, Freiburg, Germany
[3] Institute of Applied Physics, University Erlangen, D-91058, Erlangen, Germany
来源：
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms | 1999年 / 155卷 / 01期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：132 / 136
相关论文
共 50 条
  • [41] Hetero-epitaxial defects and optical characteristics of SiCGe layers grown on 6H-SiC substrate
    Lin, Tao
    Lin, Nan
    Li, Lian-bi
    Yang, Chen
    Pu, Hong-bin
    Chen, Zhi-ming
    OPTOELECTRONIC MATERIALS, PTS 1AND 2, 2010, 663-665 : 445 - 448
  • [42] Luminescence determination of donor concentration in n-type 6H-SiC
    Dyakonova, NV
    Bluet, JM
    Syrkin, AL
    ContrerasAzema, S
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 46 (1-3): : 304 - 307
  • [43] Luminescence determination of donor concentration in n-type 6H-SiC
    GES-CNRS, Montpellier, France
    Mater Sci Eng B Solid State Adv Technol, 1-3 (304-307):
  • [44] Hydrogen site location in ultrathin vanadium layers by N-15 nuclear reaction analysis
    Komander, K.
    Moro, M. V.
    Droulias, S. A.
    Mueggenburg, J.
    Palsson, G. K.
    Nyberg, T.
    Primetzhofer, D.
    Wolff, M.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2019, 455 : 57 - 60
  • [45] Effects of HCl/H2 pre-growth etching on quality of 6H-SiC epitaxial layers
    Asai, R
    1998 HIGH-TEMPERATURE ELECTRONIC MATERIALS, DEVICES AND SENSORS CONFERENCE, 1998, : 40 - 45
  • [46] Planar 6H-SiC p-n junctions prepared by selective epitaxial growth
    Christiansen, K
    Dalibor, T
    Helbig, R
    Christiansen, S
    Strunk, HP
    SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 135 - 138
  • [47] The mechanism of Fenton reaction of hydrogen peroxide with single crystal 6H-SiC substrate
    Deng, Jiayun
    Pan, Jisheng
    Zhang, Qixiang
    Yan, Qiusheng
    Lu, Jiabin
    SURFACES AND INTERFACES, 2020, 21
  • [48] A study of thick 3C-SiC epitaxial layers grown on 6H-SIC substrates by sublimation epitaxy in vacuum
    Lebedev, A. A.
    Zelenin, V. V.
    Abramov, P. L.
    Bogdanova, E. V.
    Lebedev, S. P.
    Nel'son, D. K.
    Razbirin, B. S.
    Shcheglov, M. P.
    Tregubova, A. S.
    Suvajarvi, M.
    Yakimova, R.
    SEMICONDUCTORS, 2007, 41 (03) : 263 - 265
  • [49] A study of thick 3C-SiC epitaxial layers grown on 6H-SiC substrates by sublimation epitaxy in vacuum
    A. A. Lebedev
    V. V. Zelenin
    P. L. Abramov
    E. V. Bogdanova
    S. P. Lebedev
    D. K. Nel’son
    B. S. Razbirin
    M. P. Shcheglov
    A. S. Tregubova
    M. Suvajarvi
    R. Yakimova
    Semiconductors, 2007, 41 : 263 - 265
  • [50] ELECTRICAL-PROPERTIES OF EPITAXIAL 3C-SIC AND 6H-SIC P-N-JUNCTION DIODES PRODUCED SIDE-BY-SIDE ON 6H-SIC SUBSTRATES
    NEUDECK, PG
    LARKIN, DJ
    STARR, JE
    POWELL, JA
    SALUPO, CS
    MATUS, LG
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (05) : 826 - 835
12345