Rapid thermal annealing characteristics of P+-ion-implanted Si(100) wafers studied by spectroscopic ellipsometry

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作者：
Yoshida, Keiya [1 ]
Adachi, Sadao [1 ]
机构：
[1] Department of Electronic Engineering, Faculty of Engineering, Gunma University, Kiryu-shi, Gunma 376-8515, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2005年 / 44卷 / 02期
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页码：802 / 807
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