Rapid thermal annealing characteristics of P+-ion-implanted Si(100) wafers studied by spectroscopic ellipsometry

被引：0

作者：

Yoshida, Keiya ^{[1
]}

Adachi, Sadao ^{[1
]}

机构：

[1] Department of Electronic Engineering, Faculty of Engineering, Gunma University, Kiryu-shi, Gunma 376-8515, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2005年 / 44卷 / 02期

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摘要：

引用

页码：802 / 807

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