Study of the annealing kinetic effect and implantation energy on phosphorus-implanted silicon wafers using spectroscopic ellipsometry

被引：0

作者：

Lioudakis, Emmanouil ^{[1
]}

Christofides, Constantinos ^{[1
]}

Othonos, Andreas ^{[1
]}

机构：

[1] Photonics and Optoelectronics Research Laboratory, Department of Physics, University of Cyprus, P.O. Box 20537, 1678 Nicosia, Cyprus

来源：

Journal of Applied Physics | 2006年 / 99卷 / 12期

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暂无

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摘要：

Journal article (JA)

引用

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[1] Study of the annealing kinetic effect and implantation energy on phosphorus-implanted silicon wafers using spectroscopic ellipsometry
Lioudakis, Emmanouil
Christofides, Constantinos
Othonos, Andreas
JOURNAL OF APPLIED PHYSICS, 2006, 99 (12)
[2] Ultrafast dynamics in phosphorus-implanted silicon wafers: The effects of annealing
Othonos, A
Christofides, C
PHYSICAL REVIEW B, 2002, 66 (08):
[3] Phosphorus-implanted glass for radiotherapy: Effect of implantation energy
Kawashita, M
Miyaji, F
Kokubo, T
Takaoka, GH
Yamada, I
Suzuki, Y
Kajiyama, K
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1999, 82 (03) : 683 - 688
[4] FLASH LAMP ANNEALING OF PHOSPHORUS-IMPLANTED SILICON
BUDINOV, H
STAVROV, V
BURKOVA, R
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1989, 114 (02): : K131 - K134
[5] ANNEALING CHARACTERISTICS OF PHOSPHORUS-IMPLANTED SILICON .2.
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PHILOSOPHICAL MAGAZINE, 1972, 26 (04): : 911 - &
[6] ANNEALING CHARACTERISTICS OF BORON-IMPLANTED AND PHOSPHORUS-IMPLANTED POLYCRYSTALLINE SILICON
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JOURNAL OF APPLIED PHYSICS, 1976, 47 (12) : 5167 - 5170
[7] Probing the carrier concentration profiles in phosphorus-implanted germanium using infrared spectroscopic ellipsometry
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JOURNAL OF APPLIED PHYSICS, 2015, 117 (07)
[8] LOW-TEMPERATURE ANNEALING CHARACTERISTICS OF PHOSPHORUS-IMPLANTED SILICON
MIYAO, M
NATSUAKI, N
YOSHIHIRO, N
TAMURA, M
TOKUYAMA, T
JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 : 57 - 62
[9] PHOTO-LUMINESCENCE STUDY OF LASER ANNEALING IN PHOSPHORUS-IMPLANTED AND UN-IMPLANTED SILICON
NAKASHIMA, H
SHIRAKI, Y
MIYAO, M
JOURNAL OF APPLIED PHYSICS, 1979, 50 (09) : 5966 - 5969
[10] INCOHERENT-LIGHT-FLASH ANNEALING OF PHOSPHORUS-IMPLANTED SILICON
CORRERA, L
PEDULLI, L
APPLIED PHYSICS LETTERS, 1980, 37 (01) : 55 - 57

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