共 50 条
- [32] Effect of thermal annealing on the microstructure of ytterbium-implanted silicon wafers Journal of Materials Science, 1997, 32 : 6665 - 6670
- [34] DEFECT ANNEALING IN PHOSPHORUS IMPLANTED SILICON - DLTS STUDY APPLIED PHYSICS, 1979, 18 (03): : 275 - 278
- [37] Rapid thermal annealing characteristics of P+-ion-implanted Si(100) wafers studied by spectroscopic ellipsometry JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (02): : 802 - 807
- [38] Depth profile characterization of hydrogen implanted silicon using spectroscopic ellipsometry PROCESS AND MATERIALS CHARACTERIZATION AND DIAGNOSTICS IN IC MANUFACTURING, 2003, 5041 : 105 - 114
- [39] Rapid thermal annealing characteristics of P+-ion-implanted Si(100) wafers studied by spectroscopic ellipsometry Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2005, 44 (02): : 802 - 807
- [40] The effect of implantation, energy, and dose on extended defect formation for MeV phosphorus implanted silicon Appl Phys Lett, 17 (2629-2631):