Point defects in III-V compound semiconductors

被引:0
|
作者
机构
来源
Diffusion and Defect Data. Pt A Defect and Diffusion Forum | 2000年 / 183卷
关键词
D O I
10.4028/www.scientific.net/ddf.183-185.85
中图分类号
学科分类号
摘要
Semiconducting gallium arsenide
引用
收藏
页码:85 / 94
相关论文
共 50 条
  • [31] Phonons in {110} surfaces of III-V compound semiconductors
    Nienhaus, H
    PHYSICAL REVIEW B, 1997, 56 (20): : 13194 - 13201
  • [32] NONRADIATIVE RECOMBINATION AT DISLOCATIONS IN III-V COMPOUND SEMICONDUCTORS
    PETROFF, PM
    LOGAN, RA
    SAVAGE, A
    PHYSICAL REVIEW LETTERS, 1980, 44 (04) : 287 - 291
  • [33] THIN PHASE EPITAXY OF III-V COMPOUND SEMICONDUCTORS
    SEBESTYEN, T
    ACTA PHYSICA ACADEMIAE SCIENTIARUM HUNGARICAE, 1979, 47 (1-3): : 51 - 67
  • [34] ION-IMPLANTATION IN III-V COMPOUND SEMICONDUCTORS
    RAO, MV
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 79 (1-4): : 645 - 647
  • [35] Dielectric susceptibility of amorphous III-V compound semiconductors
    Acharya, RN
    Tripathy, PC
    Sahu, T
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1996, 11 (01) : 44 - 47
  • [36] RECENT PROGRESS IN CHARACTERIZATION OF III-V COMPOUND SEMICONDUCTORS
    HUA, QH
    SUN, YZ
    XUE, SR
    LI, GP
    PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 1985, 11 (04): : 291 - 298
  • [37] OUTLINING THE ZONES OF TERNARY III-V COMPOUND SEMICONDUCTORS
    NAGEL, G
    BENZ, KW
    ZEITSCHRIFT FUR KRISTALLOGRAPHIE, 1985, 170 (1-4): : 137 - 138
  • [38] OPTICALLY ENHANCED OXIDATION OF III-V COMPOUND SEMICONDUCTORS
    FUKUDA, M
    TAKAHEI, K
    JOURNAL OF APPLIED PHYSICS, 1985, 57 (01) : 129 - 134
  • [39] VAPOR TRANSPORT EQUATIONS FOR III-V COMPOUND SEMICONDUCTORS
    WATANABE, H
    ARIZUMI, T
    NISHINAGA, T
    JOURNAL OF CRYSTAL GROWTH, 1972, 17 (DEC) : 183 - +
  • [40] Thermal and nonthermal melting of III-V compound semiconductors
    Medvedev, Nikita
    Fang, Zhaoji
    Xia, Chenyi
    Li, Zheng
    PHYSICAL REVIEW B, 2019, 99 (14)