ION-IMPLANTATION IN III-V COMPOUND SEMICONDUCTORS

被引：32

作者：

RAO, MV

机构：

[1] Department of Electrical and Computer Engineering, George Mason University, Fairfax

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1993年 / 79卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(93)95433-6

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Ion implantation doping of the III-V compounds GaAs, InP, AlGaAs, InAlAs, InGaAs, and ]nSb by shallow donors, shallow acceptors, transition metals, and light-ion species is reviewed. Our recent results on MeV energy implants are also presented along with the keV energy results.

引用

页码：645 / 647

页数：3

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[1] DOPING OF III-V COMPOUND SEMICONDUCTORS BY ION-IMPLANTATION
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