ION-IMPLANTATION IN III-V COMPOUND SEMICONDUCTORS

被引：32
|
作者：
RAO, MV
机构：
[1] Department of Electrical and Computer Engineering, George Mason University, Fairfax
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1993年 / 79卷 / 1-4期
关键词：
D O I：
10.1016/0168-583X(93)95433-6
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Ion implantation doping of the III-V compounds GaAs, InP, AlGaAs, InAlAs, InGaAs, and ]nSb by shallow donors, shallow acceptors, transition metals, and light-ion species is reviewed. Our recent results on MeV energy implants are also presented along with the keV energy results.
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页码：645 / 647
页数：3
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