Point defects in III-V compound semiconductors

被引：0

|

作者：

机构：

来源：

Diffusion and Defect Data. Pt A Defect and Diffusion Forum | 2000年 / 183卷

关键词：

D O I：

10.4028/www.scientific.net/ddf.183-185.85

中图分类号：

学科分类号：

摘要：

Semiconducting gallium arsenide

引用

收藏

页码：85 / 94

相关论文

共 50 条

[1] Point defects in III-V compound semiconductors
Chen, N
DEFECTS AND DIFFUSION IN SEMICONDUCTORS, 2000, 183-1 : 85 - 93
[2] DEFECTS IN III-V COMPOUND SEMICONDUCTORS
PETROFF, PM
SEMICONDUCTORS AND SEMIMETALS, 1985, 22 : 379 - 403
[3] ELECTRONIC-STRUCTURES OF POINT-DEFECTS IN III-V COMPOUND SEMICONDUCTORS
PUSKA, MJ
JOURNAL OF PHYSICS-CONDENSED MATTER, 1989, 1 (40) : 7347 - 7366
[4] CHEMICAL TRENDS FOR NATIVE DEFECTS IN III-V COMPOUND SEMICONDUCTORS
POTZ, W
FERRY, DK
PHYSICAL REVIEW B, 1985, 31 (02) : 968 - 973
[5] Positron annihilation study of defects in III-V compound semiconductors
Wang, Shao-jie
Chen, Zhi-quan
Wang, Zhu
Wuhan Daxue Xuebao/Journal of Wuhan University, 2000, 46 (01): : 67 - 72
[6] PASSIVATION OF III-V COMPOUND SEMICONDUCTORS
VIKTOROVITCH, P
REVUE DE PHYSIQUE APPLIQUEE, 1990, 25 (09): : 895 - 914
[7] ON THE OXIDATION OF III-V COMPOUND SEMICONDUCTORS
MONCH, W
SURFACE SCIENCE, 1986, 168 (1-3) : 577 - 593
[8] STUDIES ON III-V COMPOUND SEMICONDUCTORS
KRANZER, D
ZIMMERL, O
HILLBRAND, H
POTZL, H
ACTA PHYSICA AUSTRIACA, 1972, 35 (1-2): : 110 - +
[9] LOCALIZED DEFECTS IN III-V SEMICONDUCTORS
JAROS, M
BRAND, S
PHYSICAL REVIEW B, 1976, 14 (10): : 4494 - 4505
[10] POINT-DEFECTS AND DISLOCATION CLIMB IN III-V COMPOUNDS SEMICONDUCTORS
PETROFF, PM
JOURNAL DE PHYSIQUE, 1979, 40 : 201 - 205

← 1 2 3 4 5 →