Thermal stability of beryllium atoms in Be δ-doped GaAs grown on GaAs(111)A by molecular beam epitaxy

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作者：
Hirai, M. [1 ]
Ohnishi, H. [1 ]
Fujita, K. [1 ]
Watanabe, T. [1 ]
机构：
[1] ATR Optical and Radio Communications, Research Lab, Kyoto, Japan
来源：
Japanese Journal of Applied Physics, Part 2: Letters | 1996年 / 35卷 / 6 B期
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