共 50 条
- [41] Coexistence of two types of nucleation sites for oxygen precipitates in Czochralski silicon Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1992, 31 (08): : 2519 - 2526
- [42] COEXISTENCE OF 2 TYPES OF NUCLEATION SITES FOR OXYGEN PRECIPITATES IN CZOCHRALSKI SILICON JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (08): : 2519 - 2526
- [44] Thermal stability of oxygen precipitates in nitrogen-doped Czochralski silicon GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY, 2004, 95-96 : 111 - 116
- [45] The effect of backside films on Rapid Thermal Oxidation (RTO) growth on silicon wafers ICSE'98: 1998 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, PROCEEDINGS, 1998, : 80 - 85
- [46] Oxygen precipitation heterogeneously nucleating on silicon phosphide precipitates in heavily phosphorus-doped Czochralski silicon Journal of Applied Physics, 2009, 105 (09):
- [50] WARPAGE OF CZOCHRALSKI-GROWN SILICON-WAFERS AS AFFECTED BY OXYGEN PRECIPITATION JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1985, 24 (07): : 815 - 821