Fabrication of high-aspect-ratio InP-based vertical-cavity laser mirrors using CH4/H2/O2/Ar reactive ion etching

被引:0
|
作者
Schramm, Jeff E.
Babic, Dubravko I.
Hu, Evelyn L.
Bowers, John E.
Merz, James L.
机构
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [31] Surface- and sidewall-damage of InP-based optoelectronic devices during reactive ion etching using CH4/H-2
    Bottner, T
    Krautle, H
    Kuphal, E
    Miethe, K
    Hartnagel, HL
    1996 EIGHTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, 1996, : 115 - 118
  • [32] MAGNETRON ENHANCED REACTIVE ION ETCHING OF GAAS IN CH4/H2/AR - SURFACE DAMAGE STUDY
    MCLANE, GF
    BUCHWALD, WR
    CASAS, L
    COLE, MW
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1994, 12 (04): : 1356 - 1359
  • [33] Electron cyclotron resonance-reactive ion etching of III-V semiconductors by cyclic injection of CH4/H2/Ar and O2 with constant Ar flow
    Haneji, N
    Segami, G
    Ide, T
    Suzuki, T
    Arakawa, T
    Tada, K
    Shimogaki, Y
    Nakano, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2003, 42 (6B): : 3958 - 3961
  • [34] Effect of Ar addition in ECR CH4/H2/Ar plasma etching of GaAs, InP and InGaP
    Dept. of Mat. Sci. and Eng. Science, University of Florida, Gainesville, FL 32611, United States
    不详
    Solid State Electron, 7 (1095-1099):
  • [35] Reactive ion etching of vertical GaN mesas by the addition of CH4 to BCl3/H2/Ar inductively coupled plasma
    Lee, BY
    Jung, SY
    Lee, JL
    Park, YJ
    Paek, MC
    Cho, KI
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2001, 16 (06) : 471 - 473
  • [36] High-aspect-ratio deep Si etching of micro/nano scale features with SF6/H2/O2 plasma, in a low plasma density reactive ion etching system
    Sanaee, Z.
    Poudineh, M.
    Mehran, M.
    Azimi, S.
    Mohajerzadeh, S.
    NANOTECHNOLOGY 2011: ELECTRONICS, DEVICES, FABRICATION, MEMS, FLUIDICS AND COMPUTATIONAL, NSTI-NANOTECH 2011, VOL 2, 2011, : 325 - 328
  • [37] Novel N2/H2/CH4 based ion beam processes for etching InP/InGaAsP
    Anand, S
    Carlström, CF
    Landgren, G
    PROCEEDING OF THE TENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOLS I AND II, 2000, 3975 : 208 - 211
  • [38] REACTIVE ION ETCHING OF GAAS WITH HIGH ASPECT RATIOS WITH CL2-CH4-H2-AR MIXTURES
    VODJDANI, N
    PARRENS, P
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (06): : 1591 - 1598
  • [39] Improved etched surface morphology in electron cyclotron resonance-reactive ion etching of GaN by cyclic injection of CH4/H2/Ar and O2 with constant Ar flow
    Arakawa, T
    Awa, Y
    Ide, T
    Haneji, N
    Tadai, K
    Sugiyama, M
    Shimizu, H
    Shimogaki, Y
    Nakano, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (7B): : 5819 - 5823