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- [4] CH4/H2 reactive ion etching induced damage of InPJOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (06): : 2803 - 2807Neitzert, HCFang, RKunst, MLayadi, N
- [6] REACTIVE ION ETCHING OF INP USING CH4/H2 MIXTURES - MECHANISMS OF ETCHING AND ANISOTROPYJOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (05): : 1130 - 1140HAYES, TRDREISBACH, MATHOMAS, PMDAUTREMONTSMITH, WCHEIMBROOK, LA
- [7] Reactive ion etching of ZnSe, ZnSSe, ZnCdSe and ZnMgSSe by H2/Ar and CH4/H2/ArJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2000, 39 (6 A): : 3308 - 3313Chen, W.R.Chang, S.J.Su, Y.K.Lan, W.H.Lin, A.C.H.Chang, H.
- [8] Reactive ion etching of ZnSe, ZnSSe, ZnCdSe and ZnMgSSe by H2/Ar and CH4/H2/ArJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (6A): : 3308 - 3313Chen, WRChang, SJSu, YKLan, WHLin, ACHChang, H
- [9] REACTIVE ION ETCHING OF INP USING A CH4/H2 MIXTURE-CHARACTERIZATION OF ETCHING INTERFACEVIDE-SCIENCE TECHNIQUE ET APPLICATIONS, 1990, 45 (251): : 142 - 142LIEVIN, JLLEGOUEZIGOU, LZAMKOTSIAN, F
- [10] SELECTIVE ETCHING OF INP AND INGAASP OVER ALINAS USING CH4/H2 REACTIVE ION ETCHINGAPPLIED PHYSICS LETTERS, 1993, 62 (24) : 3189 - 3191ARNOT, HEGGLEW, RWSCHIAVINI, GRIGBY, LJPICCIRILLO, A