Full band Monte Carlo simulation for temperature-dependent electron transport in gallium nitride

被引：0
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作者：
Ando, Yuji [1 ]
Hori, Yasuko [1 ]
Contrata, Walter [1 ]
Samoto, Norihiko [1 ]
机构：
[1] Kansai Electronics Res. Laboratories, NEC Corp., 2-9-1 Seiran, 520-0833, Otsu, Japan
来源：
Physica B: Condensed Matter | 1999年 / 272卷 / 01期
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页码：253 / 255
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