Full-band Monte Carlo device simulation for hot carrier transport phenomena

被引：0
|
作者：
Iizuka, T [1 ]
机构：
[1] NEC Corp Ltd, Silicon Syst Res Labs, Tokyo, Japan
来源：
NEC RESEARCH & DEVELOPMENT | 1998年 / 39卷 / 04期
关键词：
Monte Carlo (MC); hot carriers; Si devices; device simulation;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
One problem threatening Si device operation is along-term characteristics degradation due to hot carriers. Identifying hot carriers in position and energy space is made possible through Full-Band Monte Carlo (FBMC) device simulation. In this paper, the FBMC technique is reviewed and its numerical aspects toward high-performance computing are described. Finally, hot carrier transport properties, such as substrate current characteristics and MOS interface hot carrier concentrations are shown for a 0.2 mu m nMOSFET.
引用
收藏
页码：469 / 475
页数：7
相关论文
共 50 条
  • [1] Full-band Monte Carlo analysis of strain effects on carrier transport in GaN
    Miyazaki, Wataru
    Tanaka, Hajime
    Mori, Nobuya
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2024, 63 (02)
  • [2] Full-band Monte Carlo analysis of hot-carrier light emission in GaAs
    Ferretti, I
    Abramo, A
    Brunetti, R
    Jacoboni, C
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1997, 204 (01): : 538 - 540
  • [3] Analysis of hot-carrier-induced oxide degradation in MOSFETs by means of full-band Monte Carlo simulation
    Kamakura, Y
    Deguchi, K
    Taniguchi, K
    SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES 2001, 2001, : 108 - 115
  • [4] Full-Band Monte Carlo Simulation of HgCdTe APDs
    Bertazzi, Francesco
    Moresco, Michele
    Penna, Michele
    Goano, Michele
    Bellotti, Enrico
    JOURNAL OF ELECTRONIC MATERIALS, 2010, 39 (07) : 912 - 917
  • [5] Full-Band Monte Carlo Simulation of HgCdTe APDs
    Francesco Bertazzi
    Michele Moresco
    Michele Penna
    Michele Goano
    Enrico Bellotti
    Journal of Electronic Materials, 2010, 39 : 912 - 917
  • [6] Investigation of the local force approximation in numerical device simulation by full-band Monte Carlo simulation
    Jungemann, C
    Neinhüs, B
    Meinerzhagen, B
    VLSI DESIGN, 2001, 13 (1-4) : 281 - 285
  • [7] Full-band Monte Carlo model for hole transport in silicon
    Journal of Applied Physics, 1997, 81 (05):
  • [8] Full-band Monte Carlo simulation of electron transport in 3C-SiC
    Nilsson, HE
    Englund, U
    Hjelm, M
    SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 537 - 540
  • [9] A full-band Monte Carlo model for hole transport in silicon
    Jallepalli, S
    Rashed, M
    Shih, WK
    Maziar, CM
    Tasch, AF
    JOURNAL OF APPLIED PHYSICS, 1997, 81 (05) : 2250 - 2255
  • [10] Efficient full-band Monte Carlo simulation of silicon devices
    Jungemann, C
    Keith, S
    Bartels, M
    Meinerzhagen, B
    IEICE TRANSACTIONS ON ELECTRONICS, 1999, E82C (06) : 870 - 879
12345