Monte Carlo simulation of electron transport in PbTe

被引：0
|
作者：
Palankovski, V. [1 ]
Wagner, M. [1 ]
Heiss, W. [2 ]
机构：
[1] TU Vienna, Adv Mat & Device Anal Grp, IuE, Vienna, Austria
[2] Univ Linz, Inst Semicond & Solid State Phys, Linz, Austria
来源：
NARROW GAP SEMICONDUCTORS 2007 | 2008年 / 119卷
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A Monte Carlo (MC) technique is employed to investigate stationary electron transport in lead telluride (PbTe). Results for electron mobility as a function of lattice temperature, free carrier concentration, and electric field are compared with experimental data and the few available other Monte Carlo simulation results.
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页码：77 / +
页数：2
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