Simulation of Electron Transport in Silicon using Monte Carlo Method

被引:0
|
作者
Wang, Zan [1 ]
Quan, Lei [2 ]
Ruan, Yiwu
机构
[1] Henan Univ Technol, Zhengzhou 450007, Peoples R China
[2] Henan Mech & Elect Vocat Coll, Zhengzhou 450007, Peoples R China
来源
MATERIALS AND DESIGN, PTS 1-3 | 2011年 / 284-286卷
基金
中国国家自然科学基金;
关键词
Monte Carlo; Electron; Phonon;
D O I
10.4028/www.scientific.net/AMR.284-286.871
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
A Monte Carlo method is employed to investigate the properties of electron transport with considerations of electron-phonon scattering including intervalley scattering and intravalley scattering. Under different electric fields, the coupling relations between electrons and phonons are studied, and the behaviors of absorbing and releasing phonons from electrons are also analyzed. The results show the scattering events of absorbing phonons from electrons decrease with the increasing simulation time. At the same temperature, the mean free path of electron increases initially and then decreases with the increasing electric field intensity, and finally approaches an asymptotic value.
引用
收藏
页码:871 / +
页数:2
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