METAL-INSULATOR TRANSITION IN HEAVILY DOPED COMPENSATED GERMANIUM.

被引：0

作者：

Zabrodskii, A.G.

机构：

来源：

Soviet physics. Semiconductors | 1980年 / 14卷 / 08期

关键词：

Compendex;

D O I：

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摘要：

SEMICONDUCTING GERMANIUM

引用

页码：886 / 890

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