共 50 条
- [1] METAL-INSULATOR TRANSITION IN HEAVILY DOPED COMPENSATED GERMANIUM. Soviet physics. Semiconductors, 1980, 14 (08): : 886 - 890
- [2] Peculiarities of the microwave magnetoresistance of compensated Ge:As near the metal-insulator transition PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 2000, 218 (01): : 189 - 192
- [5] METAL-INSULATOR TRANSITION IN TRANSITION METAL OXIDES BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1970, 15 (02): : 155 - &
- [6] METAL-INSULATOR TRANSITION IN TRANSITION METAL OXIDES JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1971, 4 (10): : L191 - +
- [7] The magnetoresistance of compensated Ge:As at microwave frequencies in the vicinity of the metal-insulator phase transition Semiconductors, 2000, 34 : 746 - 754
- [8] METAL-INSULATOR TRANSITION IN COMPENSATED GALLIUM-ARSENIDE IN A MAGNETIC-FIELD SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 7 (08): : 992 - 994
- [9] Cryogenic microwave imaging of metal-insulator transition in doped silicon REVIEW OF SCIENTIFIC INSTRUMENTS, 2011, 82 (03):
- [10] Dramatic electron paramagnetic resonance change in compensated Ge:As at the metal-insulator transition PHYSICA B, 2000, 284 : 1671 - 1672