METAL-INSULATOR TRANSITION IN HEAVILY DOPED COMPENSATED GERMANIUM.

被引:0
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作者
Zabrodskii, A.G.
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来源
Soviet physics. Semiconductors | 1980年 / 14卷 / 08期
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Compendex;
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摘要
SEMICONDUCTING GERMANIUM
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页码:886 / 890
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